Image Sensor with Improved Dark Current Performance

摘要

Provided is a semiconductor image sensor device. The image sensor device includes a semiconductor substrate having a first side and a second side opposite the first side. The semiconductor substrate contains a radiation-sensing region configured to sense radiation projected toward the substrate from the second side. A first layer is disposed over the second side of the semiconductor substrate. The first layer has a first energy band gap. A second layer is disposed over the first layer. The second layer has a second energy band gap. A third layer is disposed over the second layer. The third layer has a third energy band gap. The second energy band gap is smaller than the first energy band gap and the third energy band gap.

主权项

1. A semiconductor image sensor device, comprising:
a semiconductor substrate having a first side and a second side opposite the first side, wherein the semiconductor substrate contains a radiation-sensing region configured to sense radiation projected toward the substrate from the second side; a first layer disposed over the second side of the semiconductor substrate, the first layer having a first energy band gap; a second layer disposed over the first layer, the second layer having a second energy band gap; and a third layer disposed over the second layer, the third layer having a third energy band gap; wherein the second energy band gap is smaller than the first energy band gap and the third energy band gap.