SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

摘要

A semiconductor device and a fabricating method thereof are provided. The semiconductor device includes: a trench disposed within a substrate, the trench comprising an upper trench part that is wider than a lower trench part in width; a gate disposed in the trench; an interlayer insulating layer pattern disposed above the gate in the upper trench part; a source region disposed within the substrate and contacting a sidewall of the upper trench part; a body region disposed below the source region in the substrate; and a contact trench disposed above the body region and filled with a conductive material.

主权项

1. A semiconductor device comprising:
a trench disposed within an epitaxial layer of a substrate, the trench having an upper trench part that is wider than a lower trench part in width; a gate insulating layer disposed on an inner surface of the trench; a gate disposed within the trench; an interlayer insulating layer pattern disposed on the gate insulating layer within the trench including the gate; a source region disposed within the substrate and contacting a sidewall of to the upper trench part of the trench; a body region disposed within the epitaxial layer of the substrate; a contact trench filled with a metal, the contact trench allowing the source region and the body region to contact each other; and a highly doped impurity region formed beneath the contact trench, the highly doped impurity region having the same type of impurity as the body region and having a higher concentration of impurity than the body region.