| 摘要 |
PROBLEM TO BE SOLVED: To provide a GaN-based compound semiconductor excellent in emission property by inspecting an impurity content in a high-purity ammonia gas used as a material gas, which has considerable effect on luminance characteristics and controlling the impurity content.SOLUTION: In a GaN-based compound semiconductor manufacturing method by metal organic chemical vapor deposition, a concentration of a hydrocarbon-based compound which has oxygen atoms in molecules, in an ammonia gas used as a material gas is set at not exceeding 1.0 ppmV. |
