| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for producing a semiconductor single crystal rod in a FZ process that may grow a semiconductor single crystal rod of desired crystal diameter without measuring a crystal diameter of a raw crystal rod during a crystal growth of the semiconductor single crystal rod.SOLUTION: In a method for producing a semiconductor single crystal rod by a FZ process, a value of a diameter of raw crystal rod is measured previously (a), then the raw crystal rod is placed in a growth furnace (b), a melt zone is formed by melting a part of the raw crystal rod by an induction heating coil, one or more of a transfer rate of the raw crystal rod and a transfer rate of the semiconductor single crystal rod is controlled based on the predetermined value of the diameter of the raw crystal rod without measuring the value of the diameter of the raw crystal rod, and the semiconductor single crystal rod is grown by moving the induction heating coil, upper raw crystal rod and lower crystallization side single crystal rod relatively along an axial direction to move the melt zone along the axial direction (e). |
