| 摘要 |
<p>PROBLEM TO BE SOLVED: To solve the problem that, in a method for manufacturing a semiconductor device using a silicon carbide single crystal substrate, metal contaminations on a silicon carbide surface is not sufficiently removed, thereby, initial characteristics of a manufactured silicon carbide semiconductor element is deteriorated, provability of reduction in non-defective product rate is high, and it is considered that the metal contaminations adversely affects long-term reliability of the semiconductor device.SOLUTION: In a method for manufacturing a semiconductor device using a silicon carbide single crystal substrate, where a metal contamination removing process on a silicon carbide surface is applied, the contamination removing process comprises the steps of: oxidizing the silicon carbide surface; and removing a film mainly composed of silicon dioxide, where the film is formed on the silicon carbide surface in the step of oxidizing.</p> |
