| 发明名称 |
Interconnect Structures and Methods of Forming Same |
| 摘要 |
Embodiments of the present disclosure include interconnect structures and methods of forming interconnect structures. An embodiment is a method of forming an interconnect structure, the method including forming a first post-passivation interconnect (PPI) over a first substrate, forming a second PPI over the first substrate, and forming a first conductive connector on the first PPI. The method further includes forming a second conductive connector on the second PPI, and forming a molding compound on top surfaces of the first and second PPIs and surrounding portions of the first and second connectors, a first section of molding compound being laterally between the first and second connectors, the first section of molding compound having a curved top surface. |
| 申请公布号 |
US2014256092(A1) |
申请公布日期 |
2014.09.11 |
| 申请号 |
US201313914426 |
申请日期 |
2013.06.10 |
| 申请人 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
发明人 |
Kuo Hsuan-Ting;Yu Tsung-Yuan;Chen Hsien-Wei;Lu Wen-Hsiung;Cheng Ming-Da;Liu Chung-Shi |
| 分类号 |
H01L21/56 |
主分类号 |
H01L21/56 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of forming an interconnect structure, the method comprising:
forming a first post-passivation interconnect (PPI) over a first substrate; forming a second PPI over the first substrate; forming a first conductive connector on the first PPI; forming a second conductive connector on the second PPI; and forming a molding compound on top surfaces of the first and second PPIs and surrounding portions of the first and second connectors, a first section of molding compound being laterally between the first and second connectors, the first section of molding compound having a curved top surface. |
| 地址 |
Hsin-Chu TW |
