| 发明名称 |
Growth of Crystalline Materials on Two-Dimensional Inert Materials |
| 摘要 |
A method of growing crystalline materials on two-dimensional inert materials comprising functionalizing a surface of a two-dimensional inert material, growing a nucleation layer on the functionalized surface, and growing a crystalline material. A crystalline material grown on a two-dimensional inert material made from the process comprising functionalizing a surface of a two-dimensional inert material, growing a nucleation layer on the functionalized surface, and growing a crystalline material. |
| 申请公布号 |
US2014255705(A1) |
申请公布日期 |
2014.09.11 |
| 申请号 |
US201414168517 |
申请日期 |
2014.01.30 |
| 申请人 |
Nepal Neeraj;Wheeler Virginia D.;Eddy, JR. Charles R.;Kub Francis J.;Anderson Travis J.;Mastro Michael A.;Myers-Ward Rachael L.;Hangarter Sandra C. |
发明人 |
Nepal Neeraj;Wheeler Virginia D.;Eddy, JR. Charles R.;Kub Francis J.;Anderson Travis J.;Mastro Michael A.;Myers-Ward Rachael L.;Hangarter Sandra C. |
| 分类号 |
C30B25/18;C30B29/40;C30B29/02 |
主分类号 |
C30B25/18 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of growing crystalline materials on two-dimensional inert materials comprising:
functionalizing a surface of a two-dimensional inert material and creating a functionalized surface; growing a nucleation layer on the functionalized surface; and growing a crystalline material on the nucleation layer. |
| 地址 |
Woodbridge VA US |
