| 发明名称 |
TITANIUM TARGET FOR SPUTTERING |
| 摘要 |
A high-purity titanium target for sputtering containing 0.5 to 5 mass ppm of S as an additive component, wherein the purity of the target excluding additive components and gas components is 99.995 mass percent or higher. An object of this invention is to provide a high-quality titanium target for sputtering which is free from fractures and cracks during high-power sputtering (high-rate sputtering) and is capable of stabilizing the sputtering characteristics. |
| 申请公布号 |
US2014251802(A1) |
申请公布日期 |
2014.09.11 |
| 申请号 |
US201214353507 |
申请日期 |
2012.04.27 |
| 申请人 |
Tsukamoto Shiro;Makino Nobuhito;Fukushima Atsushi;Yagi Kazuto;Hino Eiji |
发明人 |
Tsukamoto Shiro;Makino Nobuhito;Fukushima Atsushi;Yagi Kazuto;Hino Eiji |
| 分类号 |
H01J37/34 |
主分类号 |
H01J37/34 |
| 代理机构 |
|
代理人 |
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| 主权项 |
1. A high-purity titanium target for sputtering containing 0.5 to 5 mass ppm of S in total as an additive component, wherein the purity of the target excluding additive components and gas components is 99.995 mass percent or higher. |
| 地址 |
Ibaraki JP |
