| 发明名称 |
SEMICONDUCTOR DEVICE HAVING A CONDUCTIVE VIAS |
| 摘要 |
A semiconductor device is provided, including: a substrate having opposing first and second surfaces and a plurality of conductive vias passing through the first and second surfaces; an insulating layer formed on the first surface of the substrate and exposing end portions of the conductive vias therefrom; and a buffer layer formed on the insulating layer at peripheries of the end portions of the conductive vias, thereby increasing product reliability and good yield. |
| 申请公布号 |
US2014252603(A1) |
申请公布日期 |
2014.09.11 |
| 申请号 |
US201314056230 |
申请日期 |
2013.10.17 |
| 申请人 |
Siliconware Precision Industries Co., Ltd. |
发明人 |
Lee Meng-Tsung;Lai Yi-Che;Chiu Shih-Kuang |
| 分类号 |
H01L23/48;H01L23/498 |
主分类号 |
H01L23/48 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device, comprising:
a substrate having opposing first and second surfaces and a plurality of conductive vias passing through the first and second surfaces; an insulating layer formed on the first surface of the substrate and exposing end portions of the conductive vias therefrom; and a buffer layer formed on the insulating layer at peripheries of the end portions of the conductive vias. |
| 地址 |
Taichung TW |
