INTEGRATED SNUBBER IN A SINGLE POLY MOSFET

摘要

Aspects of the present disclosure describe MOSFET devices that have snubber circuits. The snubber circuits comprise one or more resistors with a dynamically controllable resistance that is controlled by changes to a gate and/or drain potentials of the one or more MOSFET structures during switching events. It is emphasized that this abstract is provided to comply with rules requiring an abstract that will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims.

主权项

1. A transistor device in parallel with a snubber circuit wherein the snubber circuit comprises one or more resistors with a dynamically controllable resistance controlled by changes to a control signal to the transistor device.