| 发明名称 |
METHOD FOR FABRICATING SEMICONDUCTOR DEVICE |
| 摘要 |
Provided is a method for fabricating a semiconductor device, which includes the following steps. A substrate having a plurality of pillars is provided, wherein a plurality of trenches are formed around each pillar, and a doped region is disposed at a bottom of each pillar. An insulation layer is formed below each doped region. |
| 申请公布号 |
US2014252459(A1) |
申请公布日期 |
2014.09.11 |
| 申请号 |
US201313792228 |
申请日期 |
2013.03.11 |
| 申请人 |
Yu Chien-An;Chang Yuan-Sung;Lin Yi-Fong;Chang Chin-Piao;Wu Chih-Huang;Wang Wen-Chieh |
发明人 |
Yu Chien-An;Chang Yuan-Sung;Lin Yi-Fong;Chang Chin-Piao;Wu Chih-Huang;Wang Wen-Chieh |
| 分类号 |
H01L29/66;H01L29/78 |
主分类号 |
H01L29/66 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for fabricating a semiconductor device, comprising:
providing a substrate having a plurality of pillars, wherein a plurality of trenches are formed around each pillar, and a doped region is disposed at a bottom of each pillar; and forming an insulation layer below each doped region. |
| 地址 |
Taipei City TW |
