| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device and a manufacturing method of the same, which can achieve higher resistance of a metal resistor body.SOLUTION: A semiconductor device comprises a first lower layer wiring part 21, a second lower layer wiring part 22, a metal resistor body 41, an interlayer insulation film 50, a first plug electrode 61 and a second plug electrode 62. One end 41a of the metal resistor body 41 contacts a side face 21a of the first lower layer wiring part 21 and extends to an upper part of the first lower layer wiring part 21 along the side face 21a. The other end 41b of the metal resistor body 41 contacts a side face 22a of the second lower layer wiring part 22 and extends to an upper part of the second lower layer wiring part 22 along the side face 22a. And the first plug electrode 61 pierces the interlayer insulation film 50 and contacts the first lower layer wiring part 21. The second plug electrode 62 pierces the interlayer insulation film 50 and contacts the second lower layer wiring part 22. |
