发明名称 |
METHOD AND APPARATUS FOR THE FORMATION OF COPPER-INDIUMGALLIUM SELENIDE THIN FILMS USING THREE DIMENSIONAL SELECTIVE RF AND MICROWAVE RAPID THERMAL PROCESSING |
摘要 |
A method of depositing CIGS thin films for solar panel construction comprising: providing a chamber; providing a substrate and placing said substrate inside said chamber; providing a material source; placing said material source inside said chamber; reducing pressure within said chamber; heating said substrate and said material source using electromagnetic heating (RF and Microwaves) source; perform deposition of said material source oto said substrate. |
申请公布号 |
US2014256082(A1) |
申请公布日期 |
2014.09.11 |
申请号 |
US201414177238 |
申请日期 |
2014.02.11 |
申请人 |
Abushama Jehad A. |
发明人 |
Abushama Jehad A. |
分类号 |
H01L31/18 |
主分类号 |
H01L31/18 |
代理机构 |
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代理人 |
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主权项 |
1. A method of depositing CIGS thin film for solar panel construction comprising:
a. providing a chamber; b. providing a substrate and placing said substrate inside said chamber; c. providing a material source; d. placing metals or semi-metals in said material source inside said chamber; e. reducing pressure within said chamber; f. heating said substrate with an electromagnetic heating source; g. Heating material source with an electromagnetic heating source, h. performing deposition of said metals and/or semi-metals to said substrate. |
地址 |
San Jose CA US |