发明名称 METHOD AND APPARATUS FOR THE FORMATION OF COPPER-INDIUMGALLIUM SELENIDE THIN FILMS USING THREE DIMENSIONAL SELECTIVE RF AND MICROWAVE RAPID THERMAL PROCESSING
摘要 A method of depositing CIGS thin films for solar panel construction comprising: providing a chamber; providing a substrate and placing said substrate inside said chamber; providing a material source; placing said material source inside said chamber; reducing pressure within said chamber; heating said substrate and said material source using electromagnetic heating (RF and Microwaves) source; perform deposition of said material source oto said substrate.
申请公布号 US2014256082(A1) 申请公布日期 2014.09.11
申请号 US201414177238 申请日期 2014.02.11
申请人 Abushama Jehad A. 发明人 Abushama Jehad A.
分类号 H01L31/18 主分类号 H01L31/18
代理机构 代理人
主权项 1. A method of depositing CIGS thin film for solar panel construction comprising: a. providing a chamber; b. providing a substrate and placing said substrate inside said chamber; c. providing a material source; d. placing metals or semi-metals in said material source inside said chamber; e. reducing pressure within said chamber; f. heating said substrate with an electromagnetic heating source; g. Heating material source with an electromagnetic heating source, h. performing deposition of said metals and/or semi-metals to said substrate.
地址 San Jose CA US