发明名称 |
Methods For Depositing Films Comprising Cobalt And Cobalt Nitrides |
摘要 |
Described are cobalt-containing films, as well as methods for providing the cobalt-containing films. Certain methods pertain to exposing a substrate surface to a precursor and a co-reactant to provide a cobalt-containing film, the first precursor having a structure represented by:;;wherein each R is independently C1-C6 substituted or un-substituted alkanes, branched or un-branched alkanes, substituted or un-substituted alkenes, branched or un-branched alkenes, substituted or un-substituted alkynes, branched or un-branched alkynes or substituted or un-substituted aromatics, L is a coordinating ligand comprising a Lewis base. |
申请公布号 |
US2014255606(A1) |
申请公布日期 |
2014.09.11 |
申请号 |
US201414198776 |
申请日期 |
2014.03.06 |
申请人 |
Thompson David;Anthis Jeffrey W.;Knapp David;Schmiege Benjamin |
发明人 |
Thompson David;Anthis Jeffrey W.;Knapp David;Schmiege Benjamin |
分类号 |
C23C16/42 |
主分类号 |
C23C16/42 |
代理机构 |
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代理人 |
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主权项 |
1. A method of depositing a cobalt-containing film, the method comprising exposing a substrate surface to a precursor and a co-reactant to provide a cobalt-containing film, the first precursor having a structure represented by: wherein each R is independently C1-C6 substituted or un-substituted alkanes, branched or un-branched alkanes, substituted or un-substituted alkenes, branched or un-branched alkenes, substituted or un-substituted alkynes, branched or un-branched alkynes or substituted or un-substituted aromatics. |
地址 |
San Jose CA US |