SEMICONDUCTOR OPTICAL WAVEGUIDE DEVICE AND METHOD FOR MANUFACTURING THE SAME

摘要

A semiconductor optical waveguide device includes a substrate having a first area and a second area, and first, second, and semiconductor mesas on the substrate. The first semiconductor mesa includes a cladding layer and a first mesa portion on the second area, the first mesa portion including first and second portions. The second semiconductor mesa includes an intermediate layer, a first core layer, and first and second mesa portions on the first and second area, respectively. The third semiconductor mesa includes a second core layer, and first and second mesa portions having a greater width than that of the second semiconductor mesa. The first portion of the first semiconductor mesa has a substantially the same width as the second mesa portion of the second semiconductor mesa. The first core layer is optically coupled to the second core layer through the intermediate layer disposed between the first and second core layers.

主权项

1. A semiconductor optical waveguide device, comprising:
a substrate having a first area and a second area disposed along a first axis; a first semiconductor mesa including a cladding layer and a first mesa portion disposed on the second area, the first mesa portion including a first portion and a second portion having a smaller width than the first portion; a second semiconductor mesa disposed under the first semiconductor mesa, the second semiconductor mesa including an intermediate layer, a first core layer, a first mesa portion disposed on the first area, and a second mesa portion disposed on the second area; and a third semiconductor mesa disposed between the second semiconductor mesa and the substrate, the third semiconductor mesa including a second core layer, a first mesa portion disposed on the first area and a second mesa portion disposed on the second area, the first mesa portion of the third semiconductor mesa having an end face thr receiving an input light, wherein the first portion of the first semiconductor mesa has a substantially the same width as the second mesa portion of the second semiconductor mesa, each of the first and second mesa portions of the third semiconductor mesa has a greater width than a width of the second semiconductor mesa, and the first core layer is optically coupled to the second core layer through the intermediate layer disposed between the first core layer and the second core layer.