发明名称 PHOTOELECTRODE FOR DYE-SENSITIZED SOLAR CELL, METHOD FOR MANUFACTURING THEREOF AND DYE-SENSITIZED SOLAR
摘要 A photoelectrode for a dye-sensitized solar cell includes, a sensitizer supported in a functional semiconductor layer of a photoelectrode structure provided with the functional semiconductor layer on a transparent conductive layer of a translucent substrate made by forming the transparent conductive layer on a plastic translucent support, in which the functional semiconductor layer includes a roll-pressed layer which is being in contact with the transparent conductive layer and roll-pressing traces extending in parallel with a roll-pressing treatment direction on a surface of the roll-pressed layer, and a surface roughness Ra in a first direction which is in parallel with the roll-pressing treatment direction is smaller than a surface roughness Ra in a second direction which is orthogonal to the first direction on a surface of the functional semiconductor layer.
申请公布号 US2014251427(A1) 申请公布日期 2014.09.11
申请号 US201414281053 申请日期 2014.05.19
申请人 TOKYO UNIVERSITY OF SCIENCE EDUCATIONAL FOUNDATION ADMINISTRATIVE ORGANIZATION ;TOPPAN PRINTING CO., LTD. 发明人 WATANABE Naoya;KUDOU Tomohiro;OZAWA Hironobu;ARAKAWA Hironori;SHIBAYAMA Naoyuki
分类号 H01G9/20 主分类号 H01G9/20
代理机构 代理人
主权项 1. A photoelectrode for a dye-sensitized solar cell, comprising: a sensitizer supported in a functional semiconductor layer of a photoelectrode structure provided with the functional semiconductor layer on a transparent conductive layer of a translucent substrate made by forming the transparent conductive layer on a plastic translucent support, wherein the functional semiconductor layer includes a roll-pressed layer which is being in contact with the transparent conductive layer and roll-pressing traces extending in parallel with a roll-pressing treatment direction on a surface of the roll-pressed layer, and a surface roughness Ra in a first direction which is in parallel with the roll-pressing treatment direction is smaller than a surface roughness Ra in a second direction which is orthogonal to the first direction on a surface of the functional semiconductor layer, and the surface roughness Ra in the second direction is greater than or equal to 1.2 times the surface roughness Ra in the first direction.
地址 Tokyo JP