发明名称 |
Broad spectrum, endpoint detection window chemical mechanical polishing pad and polishing method |
摘要 |
A chemical mechanical polishing pad is provided, comprising: a polishing layer having a polishing surface; and, a broad spectrum, endpoint detection window block having a thickness along an axis perpendicular to a plane of the polishing surface; wherein the broad spectrum, endpoint detection window block, comprises an olefin copolymer; wherein the olefin copolymer, comprises, as initial components: ethylene, a branched or straight chain C3-30 α-olefin; a silane; and, optionally, a polyolefin; wherein the broad spectrum, endpoint detection window block exhibits a uniform chemical composition across its thickness; wherein the broad spectrum, endpoint detection window block exhibits a spectrum loss ≦60%; and, wherein the polishing surface is adapted for polishing a substrate selected from a magnetic substrate, an optical substrate and a semiconductor substrate. |
申请公布号 |
US2014256226(A1) |
申请公布日期 |
2014.09.11 |
申请号 |
US201313788539 |
申请日期 |
2013.03.07 |
申请人 |
ROHM AND HAAS ELECTRONIC MATERIALS CMP HOLDINGS, INC. ;DOW GLOBAL TECHNOLOGIES LLC |
发明人 |
Repper Angus;Leugers Mary A.;James David B. |
分类号 |
B24B37/20;B24B37/013 |
主分类号 |
B24B37/20 |
代理机构 |
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代理人 |
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主权项 |
1. A chemical mechanical polishing pad comprising:
a polishing layer having a polishing surface; and, a broad spectrum, endpoint detection window block having a thickness, TW, along an axis perpendicular to a plane of the polishing surface; wherein the broad spectrum, endpoint detection window block, comprises an olefin copolymer; wherein the olefin copolymer is a reaction product of initial components comprising: ethylene; a branched or straight chain C3-30 α-olefin; a silane; and, optionally, a polyolefin; wherein the broad spectrum, endpoint detection window block exhibits a uniform chemical composition across its thickness, TW; wherein the broad spectrum, endpoint detection window block exhibits a spectrum loss ≦60%; and, wherein the polishing surface is adapted for polishing a substrate selected from a magnetic substrate, an optical substrate and a semiconductor substrate. |
地址 |
Newark DE US |