| 发明名称 |
Cleaning Solution for Preventing Pattern Collapse |
| 摘要 |
A chemical solution for use in cleaning a patterned substrate includes water, from approximate 0.01 to 99.98 percent by weight; hydrogen peroxide, from 0 to 30 percent by weight; a pH buffering agent, from approximate 0.01 to 50 percent by weight; a metal chelating agent, from approximate 0 to 10 percent by weight; and a compound for lowering a surface tension of the combination of water, hydrogen peroxide, pH buffering agent, and metal chelating agent. Examples of the compound include an organic solvent, from approximate 0 to 95 percent by weight, or a non-ionic surfactant agent, from approximate 0 to 2 percent by weight. |
| 申请公布号 |
US2014256155(A1) |
申请公布日期 |
2014.09.11 |
| 申请号 |
US201313794304 |
申请日期 |
2013.03.11 |
| 申请人 |
Ltd. Taiwan Semiconductor Manufacturing Company, |
发明人 |
Ting Chih-Yuan;Chen Jeng-Shiou |
| 分类号 |
G03F7/42;H01L21/02 |
主分类号 |
G03F7/42 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A chemical solution for use in cleaning a patterned substrate, the chemical solution comprising:
water, from approximate 0.01 to 99.98 percent by weight; hydrogen peroxide, from 0 to 30 percent by weight; a pH buffering agent, from approximate 0.01 to 50 percent by weight; a metal chelating agent, from approximate 0 to 10 percent by weight; a compound for lowering a surface tension of the combination of water, hydrogen peroxide, pH buffering agent, and metal chelating agent. |
| 地址 |
US |
