发明名称 SUBSTRATE TREATMENT METHOD, NON-TRANSITORY COMPUTER STORAGE MEDIUM AND SUBSTRATE TREATMENT SYSTEM
摘要 In the present invention, photolithography processing is performed on a substrate to form a resist pattern over the substrate, and a treatment agent is caused to enter a side surface of the resist pattern and metal is caused to infiltrate the side surface of the resist pattern via the treatment agent, the formed resist pattern has a high etching selection ratio with respect to a film to be treated on the substrate so as to suppress a so-called pattern collapse, therefore.
申请公布号 US2014255844(A1) 申请公布日期 2014.09.11
申请号 US201414188774 申请日期 2014.02.25
申请人 Tokyo Electron Limited 发明人 IWAO Fumiko;SHIMURA Satoru
分类号 G03F7/40;G03F7/16 主分类号 G03F7/40
代理机构 代理人
主权项 1. A substrate treatment method of forming a resist pattern over a substrate, the method comprising: a resist pattern forming step of performing photolithography processing on a substrate to form a resist pattern over the substrate; and a metal treatment step of causing a treatment agent to enter a side surface of the resist pattern and causing metal to infiltrate the side surface of the resist pattern via the treatment agent.
地址 Tokyo JP