发明名称 |
SUBSTRATE TREATMENT METHOD, NON-TRANSITORY COMPUTER STORAGE MEDIUM AND SUBSTRATE TREATMENT SYSTEM |
摘要 |
In the present invention, photolithography processing is performed on a substrate to form a resist pattern over the substrate, and a treatment agent is caused to enter a side surface of the resist pattern and metal is caused to infiltrate the side surface of the resist pattern via the treatment agent, the formed resist pattern has a high etching selection ratio with respect to a film to be treated on the substrate so as to suppress a so-called pattern collapse, therefore. |
申请公布号 |
US2014255844(A1) |
申请公布日期 |
2014.09.11 |
申请号 |
US201414188774 |
申请日期 |
2014.02.25 |
申请人 |
Tokyo Electron Limited |
发明人 |
IWAO Fumiko;SHIMURA Satoru |
分类号 |
G03F7/40;G03F7/16 |
主分类号 |
G03F7/40 |
代理机构 |
|
代理人 |
|
主权项 |
1. A substrate treatment method of forming a resist pattern over a substrate, the method comprising:
a resist pattern forming step of performing photolithography processing on a substrate to form a resist pattern over the substrate; and a metal treatment step of causing a treatment agent to enter a side surface of the resist pattern and causing metal to infiltrate the side surface of the resist pattern via the treatment agent. |
地址 |
Tokyo JP |