Directly Sawing Wafers Covered with Liquid Molding Compound

摘要

A method includes forming a passivation layer over a metal pad, wherein the metal pad is further overlying a semiconductor substrate of a wafer. A Post-Passivation Interconnect (PPI) is formed to electrically couple to the metal pad, wherein a portion of the PPI is overlying the passivation layer. A metal bump is formed over and electrically coupled to the PPI. The method further includes applying a molding compound over the metal bump and the PPI, applying a release film over the molding compound, pressing the release film against the molding compound, and curing the molding compound when the release film is pressed against the molding compound. The release film is then removed from the molding compound. The wafer is sawed into dies using a blade, with the blade cutting through the molding compound.

主权项

1. A method comprising:
forming a passivation layer over a metal pad, wherein the metal pad is further overlying a semiconductor substrate of a wafer; forming a Post-Passivation Interconnect (PPI) electrically coupled to the metal pad, wherein a portion of the PPI is overlying the passivation layer; forming a metal bump over and electrically coupled to the PPI; applying a molding compound over the metal bump and the PPI; applying a release film over the molding compound; pressing the release film against the molding compound; applying a thermal step on the molding compound when the release film is pressed against the molding compound; removing the release film from the molding compound; and sawing the wafer into dies using a blade, wherein the blade cuts through the molding compound.