| 发明名称 |
Magnetic Random Access Memory Cells with Isolating Liners |
| 摘要 |
A manufacturing method to form a memory device includes forming a hard mask on a magnetic stack. A first magnetic stack etch is performed to form exposed magnetic layers. A liner is applied to the exposed magnetic layers to form protected magnetic layers. A second magnetic stack etch forms a magnetic random access memory (MRAM) cell, where the liner prevents shunting between the protected magnetic layers. |
| 申请公布号 |
US2014252516(A1) |
申请公布日期 |
2014.09.11 |
| 申请号 |
US201414203362 |
申请日期 |
2014.03.10 |
| 申请人 |
Crocus Technology Inc. |
发明人 |
Beery Dafna;Reid Jason;Shin Jong;Nozieres Jean Pierre;Joubert Olivier |
| 分类号 |
H01L43/02;H01L43/12 |
主分类号 |
H01L43/02 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A manufacturing method to form a memory device, comprising:
forming a hard mask on a magnetic stack; performing a first magnetic stack etch to form exposed magnetic layers; applying a liner to the exposed magnetic layers to form protected magnetic layers; and performing a second magnetic stack etch to form a magnetic random access memory (MRAM) cell, wherein the liner prevents shunting between the protected magnetic layers. |
| 地址 |
Santa Clara CA US |
