发明名称 |
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME |
摘要 |
A semiconductor device and a fabricating method thereof are provided. The semiconductor device include: a trench disposed within a substrate, the trench comprising an upper trench part that is wider than a lower trench part in width; a gate disposed in the trench; an interlayer insulating layer pattern disposed above the gate in the trench; a source region disposed within the substrate and contacting a sidewall of the upper trench part; a body region disposed below the source region in the substrate; and a contact trench disposed above the body region and filled with a conductive material. |
申请公布号 |
US2014252461(A1) |
申请公布日期 |
2014.09.11 |
申请号 |
US201314080465 |
申请日期 |
2013.11.14 |
申请人 |
MagnaChip Semiconductor, Ltd. |
发明人 |
KANG SooChang;KIM YoungJae |
分类号 |
H01L29/78;H01L29/66 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
|
主权项 |
1. A semiconductor device comprising:
a trench disposed within an epitaxial layer of a substrate, the trench having an upper trench part that is wider than a lower trench part in width; a gate insulating layer disposed on an inner surface of the trench; a gate disposed within the trench; an interlayer insulating layer pattern disposed on the gate insulating layer within the trench that includes the gate; a source region disposed within the substrate and contacting a sidewall of the upper trench part of the trench; a body region disposed within the epitaxial layer of the substrate; a contact trench filled with a metal, the contact trench allowing the source region and the body region to contact each other; and an impurity region disposed beneath the contact trench, the impurity region having the same type of impurity as the body region and having a higher concentration of impurity than the body region. |
地址 |
Cheongju-si KR |