| 发明名称 |
SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD |
| 摘要 |
In one embodiment, a semiconductor device can include: (i) a first doped pillar region having a doping concentration that sequentially increases from bottom to top in a vertical direction; (ii) second doped pillar regions arranged on either side of the first doped pillar region in a horizontal direction; and (iii) where sidewalls of the second doped pillar regions form sides of an inverted trapezoidal structure. |
| 申请公布号 |
US2014252456(A1) |
申请公布日期 |
2014.09.11 |
| 申请号 |
US201414173133 |
申请日期 |
2014.02.05 |
| 申请人 |
Silergy Semiconductor Technology (Hangzhou) LTD |
发明人 |
Liao Zhongping |
| 分类号 |
H01L29/10;H01L29/66;H01L29/78 |
主分类号 |
H01L29/10 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device, comprising:
a) a first doped pillar region having a doping concentration that sequentially increases from bottom to top in a vertical direction; b) second doped pillar regions arranged on either side of said first doped pillar region in a horizontal direction; and c) wherein sidewalls of said second doped pillar regions form sides of an inverted trapezoidal structure. |
| 地址 |
Hangzhou CN |
