ELECTRICAL COUPLING OF MEMORY CELL ACCESS DEVICES TO A WORD LINE

摘要

A memory array and a method for electrically coupling memory cell access devices to a word line. The memory array includes a source line electrically coupled to each source terminal of the memory cell access devices. The memory array also includes a first set of at least two vertical pillars positioned above and electrically coupled to the source line. A second set of vertical pillars electrically isolated from the source line and positioned such that the source line does not extend below the second set of vertical pillars is also included. Furthermore, gate terminals of the memory cell access devices laterally surround the first set of vertical pillars and the second set of vertical pillars. Finally, a first word line contact is positioned between two of the second set of vertical pillars. The first word line contact is electrically coupled to the gate terminals.

主权项

1. A memory array for electrically coupling memory cell access devices to a word line, the memory array comprising:
a source line electrically coupled to each source terminal of the memory cell access devices; a first set of at least two vertical pillars positioned above and electrically coupled to the source line; a second set of vertical pillars electrically isolated from the source line and positioned such that the source line does not extend below the second set of vertical pillars; gate terminals of the memory cell access devices, the gate terminals laterally surrounding the first set of vertical pillars and the second set of vertical pillars; and a first word line contact positioned between two of the second set of vertical pillars and electrically coupled to the gate terminals.