| 发明名称 |
SEMICONDUCTOR DEVICE AND ELECTRONIC APPARATUS |
| 摘要 |
A semiconductor device includes: a device region having a semiconductor layer that includes a channel section; a device peripheral region adjoining the device region; a gate electrode provided within the device region, and having a boundary section that spans the device region and the device peripheral region; a conductive layer provided between the gate electrode and the semiconductor layer; and an insulating layer provided between the gate electrode in the boundary section and the semiconductor layer. |
| 申请公布号 |
US2014252417(A1) |
申请公布日期 |
2014.09.11 |
| 申请号 |
US201414189423 |
申请日期 |
2014.02.25 |
| 申请人 |
Sony Corporation |
发明人 |
Yanagita Masashi;Kanematsu Shigeru |
| 分类号 |
H01L29/778;H01L29/78 |
主分类号 |
H01L29/778 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device comprising:
a device region having a semiconductor layer that includes a channel section; a device peripheral region adjoining the device region; a gate electrode provided within the device region, and having a boundary section that spans the device region and the device peripheral region; a conductive layer provided between the gate electrode and the semiconductor layer; and an insulating layer provided between the gate electrode in the boundary section and the semiconductor layer. |
| 地址 |
Tokyo JP |
