| 摘要 |
PROBLEM TO BE SOLVED: To provide a bi-directional ESD protection device low in holding voltage and excellent in surge absorption characteristics.SOLUTION: In an ESD protection circuit formed on a Si substrate, diodes D1 and D2 connected in series while the forward directions thereof are aligned and diodes D3 and D4 connected in series while the forward directions thereof are aligned are connected in parallel while the forward directions thereof are aligned to that of a Zener diode Dz, respectively. The diodes D1, D2, D3 and D4 are formed to have a physical relationship where the Zener diode Dz is interposed between the diodes D1 and D4 and between the diodes D2 and D3. The input/output terminal of the ESD protection circuit connected to a pad P1 is formed at a position closer to the Zener diode Dz than the diodes D1 and D2, and the input/output terminal of the ESD protection circuit connected to a pad P2 is formed at a position closer to the Zener diode Dz than the diodes D3 and D4. |
