发明名称 METHOD OF GROWING CARBON STRUCTURE, METHOD OF PRODUCING SHEET-LIKE STRUCTURE AND METHOD OF PRODUCING SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a method of producing a sheet-like structure which has excellent thermal conductivity and electrical conductivity, not only in the direction vertical to a sheet surface but in the direction in parallel with the sheet surface.SOLUTION: A method of growing a carbon structure includes forming a first catalyst metal film in a first area of a substrate 30, forming a second catalyst metal film different from the first catalyst metal film in a second area adjacent to the first area of the substrate, forming a first carbon structure having a plurality of linear structures 12 composed of carbon elements selectively in the first area, with the first catalyst metal film as catalyst, and forming a second carbon structure 14 having a graphite layer selectively in the second area, with the second catalyst metal film as catalyst.
申请公布号 JP2014166676(A) 申请公布日期 2014.09.11
申请号 JP20140032779 申请日期 2014.02.24
申请人 FUJITSU LTD 发明人 KONDO DAIYU;IWAI DAISUKE;YAMAGUCHI YOSHITAKA;SOGA IKUO
分类号 B82B3/00;B82Y40/00;C01B31/02 主分类号 B82B3/00
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