| 发明名称 |
LIGHT EMITTING DIODE, LIGHT EMITTING DIODE LAMP, AND LIGHTING DEVICE |
| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a light emitting diode and a lamp excellent in high output and high efficiency and suitable for band light emission of 760-850 nm.SOLUTION: A light emitting diode comprises: an active layer of quantum well structure formed by alternately laminating well layers expressed by a composition formula (AlGa) As (0≤X1≤0.2) and barrier layers expressed by a composition formula (AlGa) As (0<X2≤1); a light emitting section comprising a first clad layer and a second clad layer holding the active layer therebetween; a current diffusion layer formed on the light emitting section; and a functional substrate joined to the current diffusion layer. The first and second clad layers are expressed by a composition formula (AlGa)InP (0≤X3≤1,0<Y1≤1). Thickness of the well layer is set to 3-30 nm, and light emission wavelength is set to 760-850 nm.</p> |
| 申请公布号 |
JP2014168101(A) |
申请公布日期 |
2014.09.11 |
| 申请号 |
JP20140116294 |
申请日期 |
2014.06.04 |
| 申请人 |
SHOWA DENKO KK |
发明人 |
AIHARA NORIYUKI;TAKEUCHI RYOICHI |
| 分类号 |
H01L33/06;F21V19/00;F21Y101/02;H01L33/00;H01L33/10;H01L33/22;H01L33/30;H01L33/38;H01L33/48 |
主分类号 |
H01L33/06 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
