| 发明名称 |
FIELD EFFECT TRANSISTOR DEVICE |
| 摘要 |
A semi-metallic structure, comprising an LaAlO3—SrTiO3 heterostructure (19), said LaAlO3—SrTiO3 heterostructure comprising a two-dimensional hole gas (21) and a two-dimensional electron gas (23). |
| 申请公布号 |
US2014253183(A1) |
申请公布日期 |
2014.09.11 |
| 申请号 |
US201414198987 |
申请日期 |
2014.03.06 |
| 申请人 |
Kabushiki Kaisha Toshiba |
发明人 |
HOLMES Stuart N. |
| 分类号 |
H01L29/24;H01L29/778;H03K3/01;H01L29/66 |
主分类号 |
H01L29/24 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semi-metallic structure, comprising
an LaAlO3—SrTiO3 heterostructure (19),said LaAlO3—SrTiO3 heterostructure comprising a two-dimensional hole gas (21) and a two-dimensional electron gas (23). |
| 地址 |
Minato-ku JP |
