| 摘要 |
PROBLEM TO BE SOLVED: To improve characteristics of a semiconductor device including nonvolatile memory.SOLUTION: A MISFET (LT), a MISFET (HT) and a memory cell MC are formed, and a stopper film 9 made of a silicon oxide film is formed above the MISFET's and the memory cell. Then, a stress application film 10 comprising a silicon nitride film is formed on the stopper film 9, and the stress application film 10 above the MISFET (HT) and the memory cell MC is removed. Thereafter, a stress is applied on the MISFET (LT) by performing heat treatment. Thus, an SMT is not applied for all elements, but selectively applied. Accordingly, the degree of characteristic deterioration of the MISFET (HT) due to H (hydrogen) in the nitride silicon film constituting the stress application film 10 can be reduced. The degree of characteristic deterioration of the memory cell MC due to H (hydrogen) in the nitride silicon film constituting the stress application film 10 can be also reduced. |
