发明名称 ORGANIC THIN FILM TRANSISTOR
摘要 PROBLEM TO BE SOLVED: To provide an organic thin film transistor which has good transistor characteristics and keeps good temporal stability in the atmosphere or even under a high-temperature, and high-humidity condition.SOLUTION: An organic thin film transistor comprises an organic semiconductor layer including a compound expressed by the general formula (1) below and has a mobility of 0.01(cm/V s) or larger just after the fabrication thereof. [Chemical formula (1)] (In the formula, X's each represent S, Se, SO, O, N(R), Si(R)Ror C(R)R, provided that X's may be different from each other; Rand Reach represent a hydrogen atom or a substituent group; Z's each represent an aromatic carbon hydride ring or an aromatic heterocyclic ring; the compound may have, in an aromatic condensed ring, an alkyl group or a substituent group having an alkyl group; n's each represent an integer of 0-7; the total of n's is 2 or larger; and Z's are different from or identical to each other when n is 2 or larger.)
申请公布号 JP2014168064(A) 申请公布日期 2014.09.11
申请号 JP20140056245 申请日期 2014.03.19
申请人 KONICA MINOLTA INC 发明人 TAKEMURA CHIYOKO ; OKUBO YASUSHI ; OZEKI HIDEKANE ; KITA HIROSHI
分类号 H01L51/30;C07F7/08;C07F7/30;H01L21/336;H01L29/786;H01L51/05;H01L51/40 主分类号 H01L51/30
代理机构 代理人
主权项
地址