| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a film deposition apparatus and an injector that can improve the throughput of film deposition per unit time when a thin film is formed on a substrate in atom layer units.SOLUTION: A film deposition apparatus includes: a conveyance mechanism which conveys a substrate in film deposition; an injector unit which is provided with a plurality of injectors, supplying gas for film deposition toward the substrate, along a conveyance path for the substrate; and a reaction substance supply unit which produces a reaction substance. The injector unit supplies the reaction substance to a layer of a film deposition component from respective gaps between the injectors. A substrate opposition surface of an injector has a film deposition gas supply port which outputs the gas for film deposition, first gas exhaust ports which are provided on both sides in the conveyance direction of the substrate for the film deposition gas supply port, and suction excessive gas, and inactive gas supply ports which are provided on sides farther from the film deposition gas supply port for the respective first gas exhaust ports, and supply inactive gas to the film deposition component.</p> |
