| 发明名称 |
MEMORY ELEMENT AND MEMORY DEVICE |
| 摘要 |
There is disclosed a memory element including a memory layer that has a magnetization and a magnetization direction thereof varies corresponding to information; a magnetization-fixed layer that has a magnetization; and an insulating layer that is provided between the memory layer and the magnetization-fixed layer, wherein an electron that is spin-polarized is injected in a lamination direction of a layered structure, and thereby the magnetization direction of the memory layer varies and a recording of information is performed with respect to the memory layer, and a Ta film in contact with a face of the magnetization-fixed layer, the face of the magnetization-fixed layer is opposite to the insulating layer side. |
| 申请公布号 |
US2014254253(A1) |
申请公布日期 |
2014.09.11 |
| 申请号 |
US201414278716 |
申请日期 |
2014.05.15 |
| 申请人 |
Sony Corporation |
发明人 |
UCHIDA Hiroyuki;HOSOMI Masanori;OHMORI Hiroyuki;BESSHO Kazuhiro;HIGO Yutaka;YAMANE Kazutaka |
| 分类号 |
G11C11/16;H01F10/32 |
主分类号 |
G11C11/16 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A memory element, comprising:
a memory layer that has a magnetization and a magnetization direction thereof varies corresponding to information; a magnetization-fixed layer that has a magnetization is configured to be a reference for the information stored in the memory layer; and an insulating layer that is provided between the memory layer and the magnetization-fixed layer and is formed of a non-magnetic material, wherein an electron that is spin-polarized is injected in a lamination direction of a layered structure having the memory layer, the insulating layer, and the magnetization-fixed layer, and thereby the magnetization direction of the memory layer varies and a recording of information is performed with respect to the memory layer, and a Ta film in contact with a face of the magnetization-fixed layer, wherein the face of the magnetization-fixed layer is opposite to the insulating layer side. |
| 地址 |
Tokyo JP |
