SEMICONDUCTOR DEVICE USING CARBON NANOTUBE, AND MANUFACTURING METHOD THEREOF

摘要

According to one embodiment, a semiconductor device includes a wiring, a first insulation film, an underlayer deactivation layer, an underlayer, a catalyst layer and a carbon nanotube. The first insulation film is formed on the wiring and includes a hole which exposes the wiring. The underlayer deactivation layer is formed on the first insulation film at a side surface of the hole, and exposes the wiring at a bottom surface of the hole. The underlayer is formed on an exposed surface of the wiring at the bottom surface of the hole and on the underlayer deactivation layer at the side surface of the hole. The catalyst layer is formed on the underlayer at the bottom surface and the side surface of the hole. The carbon nanotube extends from the catalyst layer at the bottom surface of the hole, and fills the hole.

主权项

1. A semiconductor device comprising:
a wiring; a first insulation film formed on the wiring, the first insulation film including a hole which exposes the wiring; an underlayer deactivation layer which exposes the wiring at a bottom surface of the hole and is formed on the first insulation film at a side surface of the hole; an underlayer formed on an exposed surface of the wiring at the bottom surface of the hole and on the underlayer deactivation layer at the side surface of the hole; a catalyst layer formed on the underlayer at the bottom surface and the side surface of the hole; and a carbon nanotube which fills the hole, the carbon nanotube extending from the catalyst layer at the bottom surface of the hole.