发明名称 |
Semiconductor Device and Method of Manufacturing Thereof |
摘要 |
A semiconductor device includes a semiconductor substrate having a first main surface in which a recess is formed. Further, the semiconductor device includes an electrical interconnect structure which is arranged at a bottom of the recess. A semiconductor chip is located in the recess. The semiconductor chip includes a plurality of chip electrodes facing the electrical interconnect structure. Further, a plurality of electrically conducting elements is arranged in the electrical interconnect structure and electrically connected to the plurality of chip electrodes. |
申请公布号 |
US2014252540(A1) |
申请公布日期 |
2014.09.11 |
申请号 |
US201313790117 |
申请日期 |
2013.03.08 |
申请人 |
INFINEON TECHNOLOGIES AG |
发明人 |
Bakalski Winfried;Steltenpohl Anton |
分类号 |
H01L23/28;H01L23/50;H01L21/78;H01L23/538 |
主分类号 |
H01L23/28 |
代理机构 |
|
代理人 |
|
主权项 |
1. A semiconductor device, comprising:
a semiconductor substrate having a first main surface which comprises a recess; an electrical interconnect structure arranged at a bottom of the recess; a semiconductor chip located in the recess, wherein the semiconductor chip comprises a plurality of chip electrodes facing the electrical interconnect structure; and a plurality of electrically conducting elements arranged in the electrical interconnect structure and electrically connected to the plurality of chip electrodes. |
地址 |
Neubiberg DE |