发明名称 Semiconductor Device and Method of Manufacturing Thereof
摘要 A semiconductor device includes a semiconductor substrate having a first main surface in which a recess is formed. Further, the semiconductor device includes an electrical interconnect structure which is arranged at a bottom of the recess. A semiconductor chip is located in the recess. The semiconductor chip includes a plurality of chip electrodes facing the electrical interconnect structure. Further, a plurality of electrically conducting elements is arranged in the electrical interconnect structure and electrically connected to the plurality of chip electrodes.
申请公布号 US2014252540(A1) 申请公布日期 2014.09.11
申请号 US201313790117 申请日期 2013.03.08
申请人 INFINEON TECHNOLOGIES AG 发明人 Bakalski Winfried;Steltenpohl Anton
分类号 H01L23/28;H01L23/50;H01L21/78;H01L23/538 主分类号 H01L23/28
代理机构 代理人
主权项 1. A semiconductor device, comprising: a semiconductor substrate having a first main surface which comprises a recess; an electrical interconnect structure arranged at a bottom of the recess; a semiconductor chip located in the recess, wherein the semiconductor chip comprises a plurality of chip electrodes facing the electrical interconnect structure; and a plurality of electrically conducting elements arranged in the electrical interconnect structure and electrically connected to the plurality of chip electrodes.
地址 Neubiberg DE