Module and Assembly with Dual DC-Links for Three-Level NPC Applications

摘要

A power semiconductor module has four power terminals. An IGBT has a collector connected to the first power terminal and an emitter coupled to the third power terminal. An anti-parallel diode is coupled in parallel with the IGBT. A DC-link is connected between the second and fourth power terminals. The DC-link may involve two diodes and two IGBTs, where the IGBTs are connected in a common collector configuration. The first and second power terminals are disposed in a first line along one side of the module, and the third and fourth power terminals are disposed in a second line along the opposite side of the module. Two identical instances of the module can be interconnected together to form a three-level NPC phase leg having low stray inductances, where the phase leg has two parallel DC-links.

主权项

1. An assembly comprising:
(a) a first power semiconductor device module comprising:
a first housing having a first enclosure portion;a first power terminal having a fastening hole;a second power terminal having a fastening hole, wherein the first and second power terminals are disposed along a first line;a third power terminal having a fastening hole;a fourth power terminal having a fastening hole, wherein the first and second power terminals are disposed along a second line, wherein the second line is parallel to the first line;a first (Insulated Gate Bipolar Transistor) IGBT having a collector coupled to the first power terminal and having an emitter coupled to the third power terminal;a first recovery diode having an anode coupled to the emitter of the first IGBT and having a cathode coupled to the collector of the first IGBT;a second IGBT having a collector and having an emitter coupled to the fourth power terminal;a second recovery diode having a cathode coupled to the collector of the second IGBT and having an anode coupled to the emitter of the second IGBT;a third IGBT having a collector coupled to the collector of the second IGBT and having an emitter coupled to the second power terminal;a third recovery diode having an anode coupled to the emitter of the third IGBT and having a cathode coupled to the collector of the third IGBT; anda first substrate disposed in the first enclosure portion, wherein at least one of the first, second and third IGBTs is disposed on the first substrate, wherein the first, second and third IGBTs are disposed in the first enclosure portion, and wherein the first, second and third recovery diodes are disposed in the first enclosure portion; (b) a second power semiconductor device module comprising:
a second housing having a second enclosure portion;a fifth power terminal having a fastening hole;a sixth power terminal having a fastening hole, wherein the fifth and sixth power terminals are disposed along the second line;a seventh power terminal having a fastening hole;an eighth power terminal having a fastening hole, wherein the seventh and eighth power terminals are disposed along the first line;a fourth IGBT having an emitter coupled to the seventh power terminal and having a collector coupled to the fifth power terminal;a fourth recovery diode having an anode coupled to the emitter of the fourth IGBT and having a cathode coupled to the collector of the fourth IGBT;a fifth IGBT having a collector and having an emitter coupled to the eighth power terminal;a fifth recovery diode having an anode coupled to the emitter of the fifth IGBT and having a cathode coupled to the collector of the fifth IGBT;a sixth IGBT having a collector coupled to the collector of the fifth IGBT and having an emitter coupled to the sixth power terminal;a sixth recovery diode having an anode coupled to the emitter of the sixth IGBT and having a cathode coupled to the collector of the sixth IGBT; anda second substrate disposed in the second enclosure portion, wherein at least one of the fourth, fifth and sixth IGBTs is disposed on the second substrate, wherein the fourth, fifth, and sixth transistors are disclosed in the second enclosure portion, and wherein the fourth, fifth and sixth recovery diodes are disposed in the second enclosure portion; (c) a first conductive member coupled to the second power terminal of the first power semiconductor device module and to the eighth power terminal of the second power semiconductor device; and (d) a second conductive member coupled to the third and fourth power terminals of the first power semiconductor device module and to the fifth and sixth power terminals of the second power semiconductor device module.