发明名称 POWER SEMICONDUCTOR DEVICE
摘要 <p>PROBLEM TO BE SOLVED: To prevent an output transistor from being turned ON even when a power supply voltage is steeply increased when a power semiconductor device is in an OFF state.SOLUTION: A power semiconductor device includes: an output transistor in which a gate is connected to a first node; a first discharge transistor in which a drain is connected to the first node, and a source is connected to an output terminal; a second discharge transistor in which a drain is connected to the first node, and a source and a back gate are connected to a second node; a reverse current prevention element (diode) connected between the second node and a third node; and a control circuit. When an input signal is activated, the control circuit controls charging and discharging of the first node according to the presence or absence of load abnormality. When the input signal is deactivated, the control circuit stops the charging of the first node, turns the first discharge transistor and the second discharge transistor ON, and turns a transistor connected to the third node and a ground terminal OFF.</p>
申请公布号 JP2014168093(A) 申请公布日期 2014.09.11
申请号 JP20140093462 申请日期 2014.04.30
申请人 RENESAS ELECTRONICS CORP 发明人 NAKAHARA AKIHIRO;NAKAJIMA SAKAE
分类号 H01L27/04;G05F1/56;H01L21/822;H01L29/78 主分类号 H01L27/04
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