Photo-Resist with Floating Acid

摘要

A method for fabricating a semiconductor product includes applying a photo-resist layer to a substrate, the photo-resist layer including a higher acid concentration at an upper portion of the photo-resist layer than at a lower portion of the photo-resist layer. The method also includes exposing the photo-resist layer to a light source through a mask including a feature, the photo-resist layer including a floating, diffusing acid that will diffuse into a region of the photo-resist layer affected by the feature while not diffusing into a feature formed by the mask.

主权项

1. A method for fabricating a semiconductor product, the method comprising:
applying a positive tone photo-resist layer to a substrate; exposing the photo-resist layer to a light source through a mask including a feature; and using a negative tone developer to develop away regions of the photo-resist layer that are without acid; wherein the photo-resist layer includes floating acid components including one or more of floating Photo Acid Generator (PAG) components, Thermal Acid Generator (TAG) components, or an organic acid.