发明名称 OXIDE SPUTTERING TARGET AND MANUFACTURING METHOD OF THE SAME
摘要 PROBLEM TO BE SOLVED: To provide an oxide sputtering target for forming an optical recording medium protective film, which induces no cracks and causes no elution of In to simplify a manufacturing process, and provides a high density, and manufacturing method of the target.SOLUTION: An oxide sputtering target consists of Zr,In,Ga,Zn and oxygen, and has a structure where a ZrOphase surrounded by a phase including a complex oxide phase consisting of In, Zn, and Ga oxides. Preferably, if atomic ratios to the total metal component content excluding inevitable impurities are defined as Zr:A%, In:B%, Ga:C%, and Zn:D%, these component contents satisfy relations: 0<A&le;45.5, 9.1&le;B&le;31.0, 9.1&le;C&le;31.0, B+C&le;2D, and A+B+C+D=100.
申请公布号 JP2014167170(A) 申请公布日期 2014.09.11
申请号 JP20140091262 申请日期 2014.04.25
申请人 MITSUBISHI MATERIALS CORP 发明人 SAITO ATSUSHI;URAYAMA TSUNETARO
分类号 C23C14/34;C04B35/00;C04B35/48;G11B7/26 主分类号 C23C14/34
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