发明名称 WAFER PROCESSING METHOD
摘要 A wafer processing method for forming a via hole in a wafer. The wafer processing method includes a filament forming step of applying a pulsed laser beam to the wafer, the pulsed laser beam having a transmission wavelength to the wafer, in the condition where the focal point of the pulsed laser beam is set inside the wafer in a subject area where the via hole is to be formed, thereby forming an amorphous filament inside the wafer in the subject area, and an etching step of etching the amorphous filament formed inside the wafer by using an etching agent to thereby form the via hole inside the wafer.
申请公布号 US2014256150(A1) 申请公布日期 2014.09.11
申请号 US201414188896 申请日期 2014.02.25
申请人 Disco Corporation 发明人 Morikazu Hiroshi;Takeda Noboru
分类号 H01L21/306 主分类号 H01L21/306
代理机构 代理人
主权项 1. A wafer processing method for forming a via hole in a wafer, comprising: a filament forming step of applying a pulsed laser beam to said wafer, said pulsed laser beam having a transmission wavelength to said wafer, in a condition where the focal point of said pulsed laser beam is set inside said wafer in a subject area where said via hole is to be formed, thereby forming an amorphous filament inside said wafer in said subject area; and an etching step of etching said amorphous filament formed inside said wafer by using an etching agent to thereby form said via hole inside said wafer.
地址 Tokyo JP