SEMICONDUCTOR FIN FORMATION METHOD AND MASK SET

摘要

A mask set and method for forming FinFET semiconductor devices provides a complementary set of fin-cut masks that are used in DPT (double patterning technology) to remove fins from non-active areas of a semiconductor device, after the fins are formed. Adjacent fins, or adjacent groups of fins, are removed using pattern features from different ones of the multiple fin-cut masks.

主权项

1. A mask set for forming a fin pattern in active areas on a semiconductor device, said mask set comprising:
a fin mask with a pattern defining a plurality of parallel fins; a first fin-cut mask with a plurality of parallel first fin-cut regions outside of active areas of said semiconductor device, each said first fin-cut region including at least one strip that corresponds to at least a portion of a fin of said plurality of parallel fins; and a second fin-cut mask with a plurality of parallel second fin-cut regions outside of said active areas, each said second fin-cut region including at least one strip that corresponds to at least a portion of a fin of said plurality of parallel fins, wherein said first and second fin-cut regions are parallel and appear in an alternating sequence with respect to said plurality of parallel fins, when said first and second fin-cut masks are overlaid.