SEMICONDUCTOR DEVICE PN JUNCTION FABRICATION USING OPTICAL PROCESSING OF AMORPHOUS SEMICONDUCTOR MATERIAL

摘要

Systems and methods for semiconductor device PN junction fabrication are provided. In one embodiment, a method for fabricating an electrical device having a P-N junction comprises: depositing a layer of amorphous semiconductor material onto a crystalline semiconductor base, wherein the crystalline semiconductor base comprises a crystalline phase of a same semiconductor as the amorphous layer; and growing the layer of amorphous semiconductor material into a layer of crystalline semiconductor material that is epitaxially matched to the lattice structure of the crystalline semiconductor base by applying an optical energy that penetrates at least the amorphous semiconductor material.

主权项

1. A method for fabricating an electrical device having a P-N junction, the method comprising:
depositing a layer of amorphous semiconductor material onto a crystalline semiconductor base, wherein the crystalline semiconductor base comprises a crystalline phase of a same semiconductor as the amorphous layer; and growing the layer of amorphous semiconductor material into a layer of crystalline semiconductor material that is epitaxially matched to the lattice structure of the crystalline semiconductor base by applying an optical energy that penetrates through at least the amorphous semiconductor material; wherein the optical energy is controlled to penetrate the amorphous semiconductor material such as to produce uniform heating across an interfacing surface between amorphous and crystalline semiconductor material; wherein the optical energy is applied in a single application to produce the uniform heating across the interfacing surface for a duration lasting until the amorphous semiconductor material is completely crystallized.