| 摘要 |
PROBLEM TO BE SOLVED: To provide a pattern forming method for forming a pattern with high accuracy by using a microphase separation of a self assembling material.SOLUTION: A pattern forming method according to an embodiment includes the steps of: forming a first mask layer including a first recessed pattern and a second recessed pattern on a first surface of a substrate; providing a protection film in the first recessed pattern; providing a self assembling material in the second recessed pattern; forming a first phase and a second phase in the second recessed pattern by subjecting the self assembling material to phase separation; removing the protection film together with the first phase and forming a second mask layer that has the first recessed pattern and a third recessed pattern provided in the second recessed pattern and having an opening width narrower than that of the second recessed pattern; and processing the substrate using the second mask layer as a mask. |
