PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD

摘要

Advantages of a conventional upper electrode DC power applying manner can be maintained and disadvantages of the upper electrode DC power applying manner can be removed. In a capacitively coupled plasma processing apparatus, a first high frequency power RFH for plasma generation and a second high frequency power RFL for ion attraction are overlapped with each other to be applied to a susceptor (lower electrode) 16. Further, an AC power having a preset frequency is applied to an upper electrode 46 via a matching unit 66 and a blocking capacitor 68 from an AC power supply 64. Furthermore, the AC power has a frequency, which ions in plasma can follow, and the AC power supply 64 can vary a power, a voltage peak value, or an effective value the AC power.

主权项

1. A plasma processing apparatus comprising:
a processing chamber allowed to be vacuum exhausted; a first electrode that is provided within the processing chamber and configured to mount and support thereon a target substrate; a second electrode that is provided to be parallel with the first electrode with a preset gap within the processing chamber; a processing gas supply unit configured to supply a predetermined processing gas into a processing space between the first electrode and the second electrode within the processing chamber; a first high frequency power supply configured to apply a first high frequency power having a frequency for electrically discharging the processing gas and generating plasma to the first electrode; an AC power supply configured to apply a low frequency or a high frequency AC power having a frequency, which an ion in the plasma is allowed to follow, to the second electrode; and a blocking capacitor connected between the AC power supply and the second electrode.