DSA GRAPHO-EPITAXY PROCESS WITH ETCH STOP MATERIAL

摘要

A method for defining a template for directed self-assembly (DSA) materials includes forming an etch stop layer on a neutral material, forming a mask layer on the etch stop layer and forming an anti-reflection coating (ARC) on the mask layer. A resist layer is patterned on the ARC using optical lithography to form a template pattern. The ARC and the mask layer are reactive ion etched down to the etch stop layer in accordance with the template pattern to form a template structure. The ARC is removed from the mask layer and the template structure is trimmed to reduce a width of the template structure. A wet etch is performed to remove the etch stop layer to permit the neutral material to form an undamaged DSA template for DSA materials.

主权项

1. A method for defining a template for directed self-assembly (DSA) materials, comprising:
forming an etch stop layer on a neutral material; forming a mask layer on the etch stop layer; forming an anti-reflection coating (ARC) on the mask layer; patterning a resist layer using optical lithography to form a template pattern; reactive ion etching the ARC and the mask layer down to the etch stop layer in accordance with the template pattern to form a template structure; removing the ARC from the mask layer and trimming the template structure to reduce a width of the template structure; and performing a wet etch to remove the etch stop layer to permit the neutral material to form an undamaged DSA template for DSA materials.