发明名称 |
POST METAL CHEMICAL-MECHANICAL PLANARIZATION CLEANING PROCESS |
摘要 |
A post metal chemical-mechanical planarization (CMP) cleaning process for advanced interconnect technology is provided. The process, which follows CMP, combines an acidic clean and a basic clean in sequence. The process can achieve a more than 60% reduction in CMP defects, such as polish residues, foreign materials, slurry abrasives, scratches, and hollow metal, relative to an all-basic clean process. The process also eliminates the circular ring defects that occur intermittently during roller brush cleans within a roller brush clean module. |
申请公布号 |
US2014256133(A1) |
申请公布日期 |
2014.09.11 |
申请号 |
US201313786970 |
申请日期 |
2013.03.06 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
Devarapalli Vamsi;Goyette Colin J.;Kennett Michael R.;Khojasteh Mahmoud;Lin Qinghuang;Steffes James J.;Ticknor Adam D.;Tseng Wei-tsu |
分类号 |
H01L21/02 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
1. A method of processing a semiconductor wafer comprising:
planarizing a semiconductor wafer containing at least one metal structure; subjecting the semiconductor wafer to brush cleaning in an acidic medium and in a roller brush station including at least one roller brush; and dipping the semiconductor wafer in a basic medium, wherein said dipping is performed by continuously spinning of said semiconductor wafer and in the absence of mechanical contact with a brush or other component to provide a continuous insoluble metal-containing oxide layer over the entirety of the at least one metal structure. |
地址 |
Armonk NY US |