| 发明名称 |
ETCHING METHOD |
| 摘要 |
There is provided an etching method. A temperature at a plurality of predetermined positions on an upper surface of an Si substrate is measured during the etching processing. The etching processing includes supplying an etching solution to the upper surface of the Si substrate. An exothermic reaction occurs in the etching processing. The upper surface is heated or cooled depending on the measured value. |
| 申请公布号 |
US2014256065(A1) |
申请公布日期 |
2014.09.11 |
| 申请号 |
US201414281954 |
申请日期 |
2014.05.20 |
| 申请人 |
Tohoku University |
发明人 |
Sakai Takeshi;Yoshida Tatsuro;Yoshikawa Kazuhiro;Sugawa Shigetoshi |
| 分类号 |
H01L21/66;H01L21/306 |
主分类号 |
H01L21/66 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. An etching method comprising:
measuring a temperature at a plurality of predetermined positions on an upper surface of an Si substrate during the etching processing, wherein the etching processing comprises supplying an etching solution to the upper surface of the Si substrate, and an exothermic reaction occurs in the etching processing; and heating or cooling the upper surface depending on the measured value. |
| 地址 |
Sendai-shi JP |
