| 摘要 |
According to one embodiment, a nonvolatile semiconductor memory device comprises a semiconductor substrate, a first layer formed above the semiconductor substrate, a first conductive layer, an inter-electrode insulating layer, and a second conductive layer sequentially stacked above the first layer, a memory film formed on an inner surface of each of a pair of through holes provided in the first conductive layer, the inter-electrode insulating layer, and the second conductive layer and extending in a stacking direction, a semiconductor layer formed on the memory film in the pair of through holes, and a metal layer formed in part of the pair of through holes and/or in part of a connection hole that is provided in the first layer and connects lower end portions of the pair of through holes, the metal layer being in contact with the semiconductor layer. |
| 主权项 |
1. A nonvolatile semiconductor memory device comprising:
a semiconductor substrate; a first layer formed above the semiconductor substrate; a first conductive layer, an inter-electrode insulating layer, and a second conductive layer sequentially stacked above the first layer; a memory film formed on an inner surface of each of a pair of through holes provided in the first conductive layer, the inter-electrode insulating layer, and the second conductive layer and extending in a stacking direction; a semiconductor layer formed on the memory film in the pair of through holes and partially crystallized; and a metal layer formed in at least part of the pair of through holes and/or in at least part of a connection hole that is provided in the first layer and connects lower end portions of the pair of through holes, the metal layer being in contact with the semiconductor layer. |
