发明名称 MEMORY ARRAYS AND METHODS OF FORMING THE SAME
摘要 Memory arrays and methods of forming the same are provided. One example method of forming a memory array can include forming a conductive material in a number of vias and on a substrate structure, the conductive material to serve as a number of conductive lines of the array and coupling the number of conductive lines to the array circuitry.
申请公布号 US2014252300(A1) 申请公布日期 2014.09.11
申请号 US201414252145 申请日期 2014.04.14
申请人 Micron Technology, Inc. 发明人 Somaschini Roberto;Pellizzer Fabio;Cupeta Carmela;Nastasi Nicola
分类号 H01L45/00 主分类号 H01L45/00
代理机构 代理人
主权项
地址 Boise ID US