| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a novel method for determining an absolute value of an atomic vacancy concentration in a silicon wafer.SOLUTION: A method for determining an absolute value of an atomic vacancy concentration in a silicon wafer includes: a measurement step of measuring an amount of low-temperature softeningΔC/Cof an elastic constant of a silicon specimen; and a determination step of determining an absolute value of an atomic vacancy concentration N in a silicon wafer on the basis of the amount of low-temperature softeningΔC/Chaving been measured in the measurement step. In the determination step, the atomic vacancy concentration N is determined on the basis that an atomic vacancy concentration N=(1.5±0.2)×10/cmcorresponds to an amount of low-temperature softeningΔC/C=1×10.</p> |
